Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Light System for Integrated Circuit Chip To Chip Wafer To Wafer Communication

IP.com Disclosure Number: IPCOM000080966D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Keller, JH: AUTHOR [+4]

Abstract

The present system utilizes the Kerr effect for integrated circuit chip to-chip or wafer-to-wafer communication, wherein the output of one particular chip, for example, drives another chip.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 81% of the total text.

Page 1 of 2

Light System for Integrated Circuit Chip To Chip Wafer To Wafer Communication

The present system utilizes the Kerr effect for integrated circuit chip to-chip or wafer-to-wafer communication, wherein the output of one particular chip, for example, drives another chip.

The Kerr effect, which is described in the test Quantum Electronics, A. Yariv, published by Wiley, 1967, chapter 19, is based on the modulation of light by the application of a potential. The Kerr effect is found in a variety of materials both liquid and solid. In the present example, only solid material will be used. For off- wafer or off-chip communication, a plurality of Kerr cells may be mounted about the periphery of an integrated circuit wafer, as shown in Fig. 1B. The particular attachment of the Kerr cell to the wafer is shown in detail in Fig. 1A.

The Kerr cell is connected to the wafer by wires 10 connected to metallized tabs 11. The size of a particular Kerr cell may be varied, so as to accommodate from one hundred to several thousand cells around the periphery of a standard integrated circuit wafer. Detail of a typical modulation in a Kerr cell of Fig. 1A is shown in Fig. 1C. The modulator could have the following characteristics: Material: KTa(65)Nb(.35)O(3) (KTN) (m3m symmetry). Dimensions: L = 0.5mm; d = 1mm; Y = 0.5mm. Metallization on both L-Y surfaces: Aluminum. Potential required for 0.1 Pi rotation: 4 to 8 volts. Speed of rotation: 10 picoseconds to 1 nanosecond. Load capacitance:...