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Prediction of Failure Rate of Field Effect Transistors

IP.com Disclosure Number: IPCOM000081036D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Trindade, DC: AUTHOR

Abstract

Failure rates of field-effect semiconductor devices may be predicted by the following steps: 1) determining the average percentage of a first sample of devices, which exhibit dielectric breakdown after a short period (e.g., 2 to 10 seconds) of current-limited voltage stress sufficient to cause normally good devices to go into saturation; 2) determining the average percentage of a second sample of devices, which exhibit dielectric breakdown after an extended period (i.e.

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Prediction of Failure Rate of Field Effect Transistors

Failure rates of field-effect semiconductor devices may be predicted by the following steps: 1) determining the average percentage of a first sample of devices, which exhibit dielectric breakdown after a short period (e.g., 2 to 10 seconds) of current-limited voltage stress sufficient to cause normally good devices to go into saturation; 2) determining the average percentage of a second sample of devices, which exhibit dielectric breakdown after an extended period
(i.e., over one-hundred hours) of low-voltage stress; 3) correlating the percentage of devices exhibiting dielectric breakdown under each stress condition, to determine the specific relationship between the percentages; 4) predicting the percentage of devices expected to exhibit breakdown at an extended period of time, by determining the average percentage of devices manufactured under slightly different manufacturing conditions which exhibit breakdown under the short current-limited voltage stress; and 5) applying the specific relationship previously determined.

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