Browse Prior Art Database

Isolated Power Feed Thru Holes

IP.com Disclosure Number: IPCOM000081144D
Original Publication Date: 1974-Apr-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Joy, RC: AUTHOR [+2]

Abstract

This device structure is a technique for supplying power to an integrated circuit device from the back side thereof. In addition, it offers a reversed biased PN junction as a means of isolation between the wafer substrate and the power supply.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 84% of the total text.

Page 1 of 2

Isolated Power Feed Thru Holes

This device structure is a technique for supplying power to an integrated circuit device from the back side thereof. In addition, it offers a reversed biased PN junction as a means of isolation between the wafer substrate and the power supply.

A major problem in advanced semiconductor device applications, wherein an entire functional unit is formed on a single semiconductor wafer (or portion thereof), is distributing power to integrated circuits on the wafer.

In this power feed-thru system, a semiconductor device wafer 10 is provided with masking layers 12 on both sides of the wafer. Openings 14 are made through layers 12, as shown in Fig. 1. The exposed surface of wafer 10 in openings 14 is then etched, preferably in an isotropic etch, forming holes 16 having an hourglass like configuration as shown in Fig. 2.

Wafer 10 is then remasked with a suitable masking layer as for example a layer of SiO(2), not shown, and the resultant structure exposed to a diffusion operation or ion implantation. In this operation, dopant for semiconductor materials or opposite type to that of wafer 10 is introduced in the regions about the opening 16, as shown in Fig. 3. The diffused or ion implanted regions 18 on the top and bottom surfaces of wafer 10 are shaped to provide the desired power distributing lines.

Connections are then made between the bottom regions of diffused region 18 to a substrate, not shown, utilizing any suitable technique, as for e...