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Polymethyl Alpha Cyanoacrylate Homopolymers and Copolymers as High Speed Positive Electron Beam Resists

IP.com Disclosure Number: IPCOM000081223D
Original Publication Date: 1974-Apr-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Need, OU: AUTHOR

Abstract

Positive electron-beam resist materials, degradable by radiation, are used in the fabrication of microelectronic components. It is desirable that such materials have fast electron-beam resist speeds. It has now been found that such materials may be obtained from methyl alpha cyanoacrylate. This material when polymerized in a homopolymer, or when copolymerized with other suitable monomers, yields photoresist polymers having very good speed. Such polymeric resist materials are coated upon substrates as films from organic solvents.

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Polymethyl Alpha Cyanoacrylate Homopolymers and Copolymers as High Speed Positive Electron Beam Resists

Positive electron-beam resist materials, degradable by radiation, are used in the fabrication of microelectronic components.

It is desirable that such materials have fast electron-beam resist speeds. It has now been found that such materials may be obtained from methyl alpha cyanoacrylate. This material when polymerized in a homopolymer, or when copolymerized with other suitable monomers, yields photoresist polymers having very good speed. Such polymeric resist materials are coated upon substrates as films from organic solvents.

Following exposure to an electron beam, development takes place by removing of the exposed portion with a solvent such as nitromethane, acetic anhydride, or acetonitrile. Best results, however, are obtained using the solvent 2,5-hexanedione.

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