Browse Prior Art Database

Double Emission Laser

IP.com Disclosure Number: IPCOM000081285D
Original Publication Date: 1974-May-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Lynch, RJ: AUTHOR

Abstract

Device 10 is a solid-state double-emission laser. It has a P type substrate 11 of GaAs. Substrate 11 supports a PN junction diode 12 of GaAlAs which is grown on the substrate 11. Electrodes 13 and 14 are coupled to an appropriate voltage supply. Typical thickness for the substrate 11 and for the P and N layers of the diode 12 are, for example, 50, 25, and 10 microns, respectively.

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Double Emission Laser

Device 10 is a solid-state double-emission laser. It has a P type substrate 11 of GaAs. Substrate 11 supports a PN junction diode 12 of GaAlAs which is grown on the substrate 11. Electrodes 13 and 14 are coupled to an appropriate voltage supply. Typical thickness for the substrate 11 and for the P and N layers of the diode 12 are, for example, 50, 25, and 10 microns, respectively.

The FN junction diode 12 is grown on the substrate 11 in such a manner, as to permit efficient optical coupling of the injection luminescent radiation from the junction 15 into the substrate 11. The impinging higher energy radiation on the substrate 11 causes the GaAs to become fluorescent at room temperature, at approximately its bandgap energy, i.e., 1.4 electron volts. As a result, a second relatively narrow spectral line lambda 2 is generated from facets 11a and 11b of the substrate 11 near its proximity with the P layer of the diode 12. Simultaneously, there is generated a fundamental radiation lambda 1 from the GaAlAs junction 15 of the diode 12.

The aluminum content in the diode 12, particularly in the diode's P layer, is controlled so that the radiation from the junction 15 efficiently reaches the substrate 11, c.f. aluminum content profile waveform of Fig. 1B. Typical emission characteristics lambda 1 and lambda 2 are 8100 and 8800 Angstroms, respectively.

For double emission, the edges 11a, 11b and the edges 12a, 12b of the substrate 11 and diode 12, resp...