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Transistor With Tunnel Gate

IP.com Disclosure Number: IPCOM000081332D
Original Publication Date: 1974-May-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Folberth, OG: AUTHOR

Abstract

The tunnel transistor is provided, in the manner of a field-effect transistor, with a drain and a source as well as with a controllable channel arranged between the latter. The channel is controlled via a tunnel gate. In contrast to the field-effect transistor, the gate of the tunnel transistor is not separated from the channel by a fully isolating layer, but by an extremely thin isolating layer having a thickness of about 20 Angstroms. This thin isolating layer permits electrons to "tunnel" into the channel area. Thus, in the case of the tunnel transistor, the tunnel effect causes electrons to be injected into the channel area, whereas the carriers in the channel area of the field-effect transistor are provided by influence (field effect).

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Transistor With Tunnel Gate

The tunnel transistor is provided, in the manner of a field-effect transistor, with a drain and a source as well as with a controllable channel arranged between the latter. The channel is controlled via a tunnel gate. In contrast to the field-effect transistor, the gate of the tunnel transistor is not separated from the channel by a fully isolating layer, but by an extremely thin isolating layer having a thickness of about 20 Angstroms. This thin isolating layer permits electrons to "tunnel" into the channel area. Thus, in the case of the tunnel transistor, the tunnel effect causes electrons to be injected into the channel area, whereas the carriers in the channel area of the field-effect transistor are provided by influence (field effect).

In a P substrate 1 two N regions 2 and 3, forming source S and drain D, are embedded at a spacing determining the length of the channel zone 4. Superimposed on channel zone 4 and separated therefrom by a thin isolating layer 5 which can be tunnelled through by electrons, is metallic gate G.

When gate G is subjected to a negative potential, electrons are injected into channel zone 4. A conductive channel is formed between source S and drain D, and electrons flow from the source to the drain. Only a small part of this flux between source S and drain D is made up of electrons emitted by tunnel gate G, so that even with a conductive channel the galvanic coupling between gate and channel is only slight....