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Modification of Insulating Al(2)O(3) Films by Amorphizing Doses of Ion Implanted Atoms

IP.com Disclosure Number: IPCOM000081403D
Original Publication Date: 1974-May-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fowler, AB: AUTHOR [+2]

Abstract

Al(2)O(3) films grown by CVD (chemical vapor deposition) processes may be crystalline rather than amorphous. Ion implantation with either argon or oxygen at sufficiently high doses (Approximately 10/15//cm/2/) can modify the conductance of the film by making it amorphous. Thus, films grown for metal-oxide semiconductor (MOS) or metal-alumina-oxide semiconductor (MAOS) devices can be selectively modified to change stability or storage properties.

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Modification of Insulating Al(2)O(3) Films by Amorphizing Doses of Ion Implanted Atoms

Al(2)O(3) films grown by CVD (chemical vapor deposition) processes may be crystalline rather than amorphous. Ion implantation with either argon or oxygen at sufficiently high doses (Approximately 10/15//cm/2/) can modify the conductance of the film by making it amorphous. Thus, films grown for metal- oxide semiconductor (MOS) or metal-alumina-oxide semiconductor (MAOS) devices can be selectively modified to change stability or storage properties.

It is particularly advantageous to make only the region under the gate amorphous, so that charge is effectively immobilized if injected from the gate.

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