Browse Prior Art Database

Buried Channel Bucket Brigade Device

IP.com Disclosure Number: IPCOM000081430D
Original Publication Date: 1974-Jun-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Lee, HS: AUTHOR

Abstract

High-performance bucket brigade shift registers can be provided with a higher efficiency and higher speed, by utilizing buried channel subsurface conduction.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Buried Channel Bucket Brigade Device

High-performance bucket brigade shift registers can be provided with a higher efficiency and higher speed, by utilizing buried channel subsurface conduction.

Improved charge transfer efficiency, reduction of noise and better low-light level imaging of bucket brigade arrays can be realized, by applying very gentle subsurface conduction to the bucket brigade shown in the figure. Shown in the figure, a potential energy minimum can be created just below the surface 6 of the array by selectively doping to a desired level depth and profile, the portions 7 and 8 of the body 9 between the N+ regions 10, 11, and 12. This permits signal charges to be transferred in the body of the semiconductor 9 without being trapped at the surface states.

Preferably the regions 10, 11, and 12 are degeneratively doped and conductively coupled to the next adjacent stages by the portions 7 and 8, to create the built-in tangential field which expedites the charge transfer near the cutoff of the device, thus increasing the transfer efficiency of the device. The electrons associated with the charge transfer in the implanted N skin 7 and 8 between the diffusions 10, 11, and 12, are pumped out by an initial period of clock pulses.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]