Browse Prior Art Database

Nondestructive Readout 3 Dimensional Dual Insulator Memory

IP.com Disclosure Number: IPCOM000081431D
Original Publication Date: 1974-Jun-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Arnett, PC: AUTHOR

Abstract

A dense 3-dimensional dual-isolation cross-point memory unit with nondestructive-readout capability can be created by using semiconductor bit lines having a variable resistivity therein, so that when the lines are biased they can be depleted and the capacitor coupling between the word and bit lines can be varied.

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Nondestructive Readout 3 Dimensional Dual Insulator Memory

A dense 3-dimensional dual-isolation cross-point memory unit with nondestructive-readout capability can be created by using semiconductor bit lines having a variable resistivity therein, so that when the lines are biased they can be depleted and the capacitor coupling between the word and bit lines can be varied.

The figure illustrates the memory structure built up on a silicon substrate 10 having an insulating layer 11 thereon. Over the layer 11 is a composite of bit lines 12 of N type silicon, interspaced with lines of silicon dioxide 13 and overcoated with a dual-insulative layer 14. The layer 14 is, in turn, covered with a series of word lines 15 of N type silicon interspaced with silicon dioxide, not shown. The word lines 15 are-arranged orthogonal to the bit lines 12. These word lines 15 are in turn coated with a dual insulator 16, and a repeated arrangement of orthogonal bit lines 17, a dual-insulator layer 18, and a set of word lines 19. The memory cells in such an arrangement are defined by the intersection of word line and bit line.

The bit line conductors, as indicated above are polysilicon, however, they are heavily doped in the center and lightly doped at either edge adjacent the dual- insulator layers.

The memory operation is based on charging the interface of the two of the dual-layer insulators to two different levels. The right operation for the described device can be accomplished by hal...