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Photoresist Cross Linked with a Thermal Free Radical Initiator for use as an Ion Implant Mask

IP.com Disclosure Number: IPCOM000081455D
Original Publication Date: 1974-Jun-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Elie, GT: AUTHOR [+2]

Abstract

The addition of thermal free-radical initiators, such as benzoyl peroxide, to commercially available positive photoresist and post baking at relatively high temperature, provides a cross-linked material suitable for ion implantation masking. The same cross-linked photoresist may also be employed as an etching mask before or after its use as an ion implantation mask.

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Photoresist Cross Linked with a Thermal Free Radical Initiator for use as an Ion Implant Mask

The addition of thermal free-radical initiators, such as benzoyl peroxide, to commercially available positive photoresist and post baking at relatively high temperature, provides a cross-linked material suitable for ion implantation masking. The same cross-linked photoresist may also be employed as an etching mask before or after its use as an ion implantation mask.

Multilayering techniques are known for increasing the thickness of ordinary photoresist layers to amounts sufficient for ion implantation purposes. It is advantageous, however, to avoid the need for multilayering (laminating) techniques while achieving effective ion blocking properties. It is further desirable, in processes employing silicon nitride or other difficult to etch layers as an intermediate structure, that the same ion-blocking photoresist layer be employed as a nitride etching mask subsequent to ion implantation.

The foregoing desirable features are achieved by the addition of a small amount of benzoyl peroxide to AZ-1350H* or AZ-1350J* photoresist or similar photoresist, followed by post baking at about 210 degrees C for about 20 minutes. The addition of 13 or 14 grams of benzoyl peroxide per 100 milliliters of photoresist is adequate. The post-baked photoresist is cross-linked by the additive and becomes able to mask, for example, boron ions at 150 kev, 3.0 x 10/13/ atoms per square centimeters...