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Photoresist Defect Analysis Procedure

IP.com Disclosure Number: IPCOM000081466D
Original Publication Date: 1974-Jun-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Morrissey, JM: AUTHOR [+2]

Abstract

Photoresist irregularities (particles, pinholes, bubbles, adhesion failure, etc.) produce defects in etched patterns during the manufacturing of integrated circuits. This procedure allows analysis of photoresist defects without damaging the photoresist itself. Defect size printability can also be ascertained.

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Photoresist Defect Analysis Procedure

Photoresist irregularities (particles, pinholes, bubbles, adhesion failure, etc.) produce defects in etched patterns during the manufacturing of integrated circuits. This procedure allows analysis of photoresist defects without damaging the photoresist itself. Defect size printability can also be ascertained.

A replica is made of the photoresist surface, preferably by using a replicating tape. Replicas can be made after the pattern is exposed, after the photoresist is developed and/or after the pattern is etched. The replica is then stored. Inspection of the etched integrated circuit patterns locates defects that were produced. The replica is then inspected at the defect site using a scanning electron microscope to determine the cause of the defect. Since only those irregularities which produce defects are analyzed (except for printability studies), the tedious mapping of all possible defect-producing irregularities is eliminated.

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