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Semiconductor Cleaning Using High Pressure Jet of Liquid

IP.com Disclosure Number: IPCOM000081608D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Berenbaum, L: AUTHOR [+2]

Abstract

The use of a high-pressure jet of liquid is an extremely effective method for removing submicron particles from semiconductor wafers. When the jet impinges on the particles, the force is sufficient to overcome the high-bonding force caused by electrostatic attraction. Radioactive deionizers, such as polonium, are not effective neutralizers of particles in the submicron range nor are high-pressure jets.

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Semiconductor Cleaning Using High Pressure Jet of Liquid

The use of a high-pressure jet of liquid is an extremely effective method for removing submicron particles from semiconductor wafers. When the jet impinges on the particles, the force is sufficient to overcome the high-bonding force caused by electrostatic attraction. Radioactive deionizers, such as polonium, are not effective neutralizers of particles in the submicron range nor are high-pressure jets.

Because particles which become embedded in the oxide can lead to oxide breakdown, it is advantageous to remove them prior to oxidation. The removal of submicron particulates of varying compositions can be accomplished by use of DI water or other liquids such as alcohol, methanol, etc., mixed with the DI water.

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