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Crystal Growth After Heater

IP.com Disclosure Number: IPCOM000081633D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Ciszek, TF: AUTHOR

Abstract

Shown is a crystal puller utilizing heat pipe technology which produces a uniform temperature along a hollow, closed body by a contained heat exchange fluid within the body. This fluid will vaporize in the body at the high-temperature regions with the vapor transported to the cooler regions, where it condenses and flows as a liquid to the high-temperature region to again repeat the process. Heat exchange fluids which can be employed at the high temperatures of crystal pulling (about 1000 degrees C) are zinc, aluminum and magnesium.

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Crystal Growth After Heater

Shown is a crystal puller utilizing heat pipe technology which produces a uniform temperature along a hollow, closed body by a contained heat exchange fluid within the body. This fluid will vaporize in the body at the high-temperature regions with the vapor transported to the cooler regions, where it condenses and flows as a liquid to the high-temperature region to again repeat the process. Heat exchange fluids which can be employed at the high temperatures of crystal pulling (about 1000 degrees C) are zinc, aluminum and magnesium.

This after-heater application for crystal pulling is especially adaptable for brittle materials, such as gadolinium gallium garnet ingots which tend to crack after growth, unless withdrawn and normally cooled very slowly in the presence of bulky, fibrous insulation. Other materials which can be pulled in the system shown are sapphire and lithium niobate.

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