Browse Prior Art Database

Susceptor Reactor

IP.com Disclosure Number: IPCOM000081636D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Deines, JL: AUTHOR [+2]

Abstract

The reactor-susceptors provide more efficient heating of the semiconductor wafer being processed, by utilizing radiated heat energy from a surface opposite the wafer.

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Susceptor Reactor

The reactor-susceptors provide more efficient heating of the semiconductor wafer being processed, by utilizing radiated heat energy from a surface opposite the wafer.

Conventional epitaxial reactors employ power sources in which susceptors made of graphite and/or silicon carbide are heated, usually by induction, and a portion of this heat is transferred to the silicon wafers positioned on the susceptor body. This transfer of heat is accomplished largely by radiation but convection and conduction also play a role. The silicon wafer is cooler in general than the susceptor by from 50-150 degrees C because the wafer also transmits and radiates energy, both to the ambient surroundings and back to the susceptor. In conventional atmospheric reactors, this temperature gradient has been tolerated but greater temperature uniformity and control would be desirable.

In Fig. 1 there is depicted a pedestal susceptor arrangement of two graphite blocks 10 and 12 separates by a predetermined distance. Preferably, the blocks 10 and 12 contain a coating of silicon carbide. Both blocks 10 and 12 are within the working region of coil 14 and are heated together to approximately the same temperature. A silicon wafer 16 is positioned on the lower block 10 between the blocks. In this arrangement, the upper block 12 now radiates energy to the lower block 10 and the silicon wafer 16. There is almost no radiation loss from the wafer 16 to the ambient surroundings. The wafer...