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Selective Growth of Silicon Germanium Heterojunctions

IP.com Disclosure Number: IPCOM000081658D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Oleszek, GM: AUTHOR

Abstract

It has been found that the rate of epitaxial growth of germanium-rich silicon-germanium alloys by pyrolytic decomposition of SiH(4) and GeH(4) is substantially enhanced, when a silicon substrate is illuminated with ultraviolet radiation.

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Selective Growth of Silicon Germanium Heterojunctions

It has been found that the rate of epitaxial growth of germanium-rich silicon- germanium alloys by pyrolytic decomposition of SiH(4) and GeH(4) is substantially enhanced, when a silicon substrate is illuminated with ultraviolet radiation.

It is known that silicon-germanium regions grown on a silicon substrate are advantageous for the creation of unique device types on otherwise standard silicon substrates.

By projecting patterns of ultraviolet radiation using optical imaging techniques, the desired regions of enhanced growth can be defined on a substrate. Although silicon-germanium will also grow in areas which are not illuminated, the growth rate is much lower and can be removed by a final Hcl etch step.

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