Browse Prior Art Database

Maskless Selective Oxide Removal Procedure

IP.com Disclosure Number: IPCOM000081709D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fiorio, RA: AUTHOR [+3]

Abstract

Maskless ion-beam writing is an ultimate means toward the goal of totally automated, instantly programmable circuit fabrication. The elimination of expensive and time-consuming photolithographic processes depends on finding techniques not only for doping the semiconductor with a deflectible, programmable ion beam, but also ways in which the beam can be used to provide insulators and conductors at the appropriate sites. The selective removal of a previously grown, uniform oxide layer by the action of an ion beam is a possible answer to part of the latter problem.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Maskless Selective Oxide Removal Procedure

Maskless ion-beam writing is an ultimate means toward the goal of totally automated, instantly programmable circuit fabrication. The elimination of expensive and time-consuming photolithographic processes depends on finding techniques not only for doping the semiconductor with a deflectible, programmable ion beam, but also ways in which the beam can be used to provide insulators and conductors at the appropriate sites. The selective removal of a previously grown, uniform oxide layer by the action of an ion beam is a possible answer to part of the latter problem.

It has been found that a dose of 10/15/ Ar/+/ ions cm/-2/ at 100 KeV onto a 5000 Angstrom layer of SiO(2) on Si renders the oxide layer impervious to the action of HF, which agent removes all of the unexposed oxide. This phenomenon makes possible, with a programmed ion beam, the selective removal of oxide by exposing a uniform layer to the required dose in areas where the oxide is to be retained. The object is to produce the effect with the minimum dose and the minimum effect on the insulating properties of the oxide.

1