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Superconducting Device Fabrication by Energetic Ion Damage

IP.com Disclosure Number: IPCOM000081721D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Harris, EP: AUTHOR [+4]

Abstract

A procedure has been devised for using ion bombardment in selected regions of a superdconductive material, so as to fabricate an array of Josephson junctions.

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Superconducting Device Fabrication by Energetic Ion Damage

A procedure has been devised for using ion bombardment in selected regions of a superdconductive material, so as to fabricate an array of Josephson junctions.

It is known that the creation of a weak link or weak coupling in a strip of superconducting material achieves a Josephson effect, similar to a metal-oxide- metal structure normally employed to achieve the Josephson effect. In the present case, a superconducting metal film such as tungsten, molybdenum, aluminum, lead, etc., is supported on a substrate. A mask, having predetermined openings, is placed in intimate contact with the metal film and an inert ion beam impinges on the mask, penetrating the openings so that the impinging ions create disorders in those regions of the metal reached by the ions.

The ion implanted regions have their transition temperatures altered, so that a pattern of superconducting paths on the surface of the metal is created. The ion damaged region has a critical temperature that is above (thus superconducting) the operating temperature of the created Josephson junction, whereas the undamaged (no ion implantation) region has its critical temperature that is below the operating temperature of the Josephson junction. In this manner, junctions or "weak links" in a superconducting path can be produced by appropriate masking or scanning, by different exposure times or different species for the ion bombardment.

It has been observed that the bombar...