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Selective Etching of Oxides by Ion Implantation

IP.com Disclosure Number: IPCOM000081743D
Original Publication Date: 1974-Jul-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Silvestri, VJ: AUTHOR

Abstract

Ion implantation is proposed as a way of selectively etching oxide films that is a substitute for etching chemically through a mask.

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Selective Etching of Oxides by Ion Implantation

Ion implantation is proposed as a way of selectively etching oxide films that is a substitute for etching chemically through a mask.

A thin (approx. 1000 Angstroms) film of Al(2)O(3) was ion implanted AR/40/, using a concentration of 3X10/15/ atoms/cm/2/ at 30KV, over a selected region of the film. The depth of implantation was approximately 500 Angstroms. An acid mixture consisting of H(3)PO(4)(76cc), 3cc of HNO(3), 15cc of COOH, and 5cc of H(2)O at 60 degrees C etched only the implanted regions.

Since ion bombardment is known to alter the etching properties of the materials being bombarded, the method is suggested for etching or thinning certain insulators by a judicious choice of ion concentration, ion potential and chemical etchant. Certain insulators that are normally deemed "nonetchable" in practice may be treatable by ion beam writing or ion bombardment through a mask.

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