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Process to Obtain Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000081753D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Sharma, V: AUTHOR

Abstract

Described is a process which obtains improved Schottky barrier diodes in integrated circuit fabrication. It comprises a method in which a semi-conductor surface is etched with a buffered hydrofluoric acid solution consisting of 45 milliliters of hydrofluoric acid of 48% dilution and 3,700 milliliters of ammonia chloride of 40% grade.

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Process to Obtain Schottky Barrier Diodes

Described is a process which obtains improved Schottky barrier diodes in integrated circuit fabrication. It comprises a method in which a semi-conductor surface is etched with a buffered hydrofluoric acid solution consisting of 45 milliliters of hydrofluoric acid of 48% dilution and 3,700 milliliters of ammonia chloride of 40% grade.

Following the etching of the semiconductor surface, it is further cleaned with a solution of at least 250 parts of nitric acid to 1 part of hydrofluoric acid for about 15 seconds. Following this the semiconductor surface is again rinsed and cleaned with deionized water.

Following this second rinsing and cleaning step, a suitable metal is deposited on the etched, cleaned and rinsed surface, such that heating of the semiconductor surface to sintering temperatures will cause the metal to adhere to the surface and form a Schottky barrier contact.

The above method has been found to form superior Schottky barrier contacts on silicon substrates.

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