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Rugged Josephson Elements and Arrays

IP.com Disclosure Number: IPCOM000081845D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Laibowitz, RB: AUTHOR [+3]

Abstract

Josephson elements and arrays with high T(c) and I(c) are described which are rugged and whose properties can be controllably varied.

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Rugged Josephson Elements and Arrays

Josephson elements and arrays with high T(c) and I(c) are described which are rugged and whose properties can be controllably varied.

It has been shown heretofore that the superconducting transition temperature (T(c)) of a superconductor such as vanadium can be increased by first depositing it in thin-film form on either Si or SiO(2) and then annealing it. Vanadium silicides with high T(c)'s are formed. SiO, S(3)N(4) and even Ge substrates can also be used. Useful applications of this technology to Josephson devices and arrays are described.

The high T(c) compound superconductors such as V(3)Si also have high critical currents (I(c)). Thus, a vanadium microbridge constructed on a surface of such compound can have an increased I(c) as a result of the annealing. This will increase the usefulness of these devices as high frequency radiation detectors. The high T(c) material will have the advantage of the absence of the effects of thermal fluctuations, especially for devices and arrays operated nominally at or around liquid He temperature.

Selective heating of devices in an array can also be accomplished by lasers or electron beams and an array can be constructed in which the T(c) and I(c) of each of the devices could be controllably varied. If the critical current from a high I(c) device is switched to a device of lower I(c), the lower I(c) device will switch to a resistive state, thereby forcing the current to seek another path....