Browse Prior Art Database

Adjusting the Doping Levels of Individual Devices

IP.com Disclosure Number: IPCOM000081858D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Johnson, WS: AUTHOR

Abstract

Greater flexibility in circuit design may be achieved by being able to vary the electrical properties of individual devices in an integrated circuit. By a process involving ion-beam writing and photolithographic masking techniques, the doping levels of individual devices in an integrated circuit may be independently adjusted.

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Adjusting the Doping Levels of Individual Devices

Greater flexibility in circuit design may be achieved by being able to vary the electrical properties of individual devices in an integrated circuit. By a process involving ion-beam writing and photolithographic masking techniques, the doping levels of individual devices in an integrated circuit may be independently adjusted.

Referring to the figure, a beam of ions 1 is focused on a single device in an integrated circuit. The area within the device to be implanted 2 is defined by photolithographic masking 3 which covers all the area on the device but the area to be implanted. The focused beam is then stepped from device to device electronically. The ion-implantation dosage and energy may therefore be controlled individually for each Device.

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