Browse Prior Art Database

Heating System for Chemical Vapor Deposition Equipment

IP.com Disclosure Number: IPCOM000081860D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Galyon, GT: AUTHOR

Abstract

When RF heating coils 1 are used in chemical vapor deposition processing the silicon wafers 2 are cooler than the graphite susceptors 3 (Fig. 1a). It is desirable to reduce the temperature gradient across the silicon wafers in order to decrease process-induced slip and to improve resistivity and thickness control. This may be accomplished by using a radiant heating system (e.g., the infrared lamps 4 in Fig. 1b or 1c) in conjunction with a conduction heating system (e.g., the RF heating coils 1).

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Heating System for Chemical Vapor Deposition Equipment

When RF heating coils 1 are used in chemical vapor deposition processing the silicon wafers 2 are cooler than the graphite susceptors 3 (Fig. 1a). It is desirable to reduce the temperature gradient across the silicon wafers in order to decrease process-induced slip and to improve resistivity and thickness control. This may be accomplished by using a radiant heating system (e.g., the infrared lamps 4 in Fig. 1b or 1c) in conjunction with a conduction heating system (e.g., the RF heating coils 1).

When a radiant heating system is used in chemical-vapor deposition, the silicon wafers are hotter than the graphite susceptors. If a radiant heating system is used in conjunction with a conduction system, the energy sources for the two systems may be adjusted by means of a temperature-control system so that the temperature gradient across the silicon wafers vanishes. As shown in Fig. 2, a detection system senses the temperature differential between the silicon wafers and the susceptor and provides a signal which is used to control the power adjustment between the conduction and radiant heating systems.

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