Browse Prior Art Database

Enhancement of Photoresist Stripping Efficiency

IP.com Disclosure Number: IPCOM000081861D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+2]

Abstract

Photoresist stripping is enhanced by exposing the resist layer following development and before the layer is postbaked.

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Enhancement of Photoresist Stripping Efficiency

Photoresist stripping is enhanced by exposing the resist layer following development and before the layer is postbaked.

A positive-resist layer comprising an alkali soluble novolak resin and a diazo ketone sensitizer coated on an oxidized semiconductor wafer was exposed and developed in a conventional manner. Following development, the remaining portion of the resist layer was exposed for 10 seconds to actinic radiation prior to postbaking the layer for 30 minutes at a temperature of 130 degrees C. The exposed portions of the oxide layer were etched with HF in a conventional manner. After etching, the resist layer was completely removed to obtain an ellipsometrically clean surface by a 5 minute treatment with acetone. A second sample, which was not exposed following development, had a residue of resist layer after a 5 minute acetone treatment. The improvement is believed to be the result of the destruction of thermally cross-linkable groups by radiation during the post-development exposure.

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