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Browse Prior Art Database

Cleaning Process for Polished Silicon Wafers

IP.com Disclosure Number: IPCOM000081862D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hallas, CE: AUTHOR [+3]

Abstract

Metal contaminants, such as copper, which affect device yields are removed from semiconductor surfaces by an HNO(3)-HF-HNO(3) cleaning cycle.

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This is the abbreviated version, containing approximately 100% of the total text.

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Cleaning Process for Polished Silicon Wafers

Metal contaminants, such as copper, which affect device yields are removed from semiconductor surfaces by an HNO(3)-HF-HNO(3) cleaning cycle.

The semiconductor material, such as a polished silicon wafer, which has been cleaned to remove all waxes and other organic materials, is first immersed in concentrated nitric acid. The wafer is then rinsed in deionized water to completely remove all traces of acid. The wafer is then immersed in hydrofluoric acid to remove the native oxide and any contaminants trapped in or under the oxide layer. The wafer is rinsed in deionized water to remove all fluoride. The wafer is immersed a second time in nitric acid to remove any remaining or reprecipitated metallics from the wafer surface. The acid is removed by thorough rinsing in deionized water and the wafer is dried. Thorough rinsing between acid treatments is needed to avoid any degrading of the polished semiconductor surfaces.

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