Browse Prior Art Database

Etch Holder for Semiconductor Wafers

IP.com Disclosure Number: IPCOM000081897D
Original Publication Date: 1974-Aug-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Krogmann, GH: AUTHOR [+2]

Abstract

During the manufacture of integrated semiconductor circuits it is frequently necessary to chemically treat only one semiconductor wafer surface, for example, for removing oxide layers, diffusion source layers or metal films from the rear side of the wafer. These etching processes necessitate that the surface not to be treated is effectively protected against chemical and mechanical attack and contamination.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 79% of the total text.

Page 1 of 2

Etch Holder for Semiconductor Wafers

During the manufacture of integrated semiconductor circuits it is frequently necessary to chemically treat only one semiconductor wafer surface, for example, for removing oxide layers, diffusion source layers or metal films from the rear side of the wafer. These etching processes necessitate that the surface not to be treated is effectively protected against chemical and mechanical attack and contamination.

In the etch holder, schematically shown in the figure, surface 2, not to be treated, of semiconductor wafer 1 is protected by a film of running DI water 3. By the Bernoulli effect, this DI water flow retains wafer 1 in a certain position over support plate 4 and discharges the used etchant into container 5, as indicated by the arrows. The water is finally discharged through outlet 6. Several spacers on the periphery of support plate 4 avoid lateral movement of the wafer.

The etching process consists of the steps indicated below:
1) With stopcock 7 closed DI water is introduced at 8,

so that under the influence of capillary 9 a

continuous DI water flow is generated over support

plate 4.
2) Placing wafer 1 with the surface to be etched upwards

on the DI water surface over support plate 4: the

wafer is held in this position by the Bernoulli

effect.
3) Application of the etching fluid by a pipette 10 or

the like.
4) Upon completion of etching, wafer 1 is rinsed by the

preferably pivotable spray jet 11 with stopcock 7 open.

In t...