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Metallurgical Bonding of Semiconductor Pad Terminals

IP.com Disclosure Number: IPCOM000081958D
Original Publication Date: 1974-Sep-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Marcotte, VC: AUTHOR [+3]

Abstract

This method and structure provides a strong mechanical bond between metallurgy layers on a semiconductor terminal. In making a solder connection between a semiconductor device and a supporting terminal, it is conventional to deposit a layer of chromium on the semiconductor device with an overlying layer of copper. However, because of the mechanical nature of the chromium and copper linkage, variations will occur in its strength due to processing variables.

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Metallurgical Bonding of Semiconductor Pad Terminals

This method and structure provides a strong mechanical bond between metallurgy layers on a semiconductor terminal. In making a solder connection between a semiconductor device and a supporting terminal, it is conventional to deposit a layer of chromium on the semiconductor device with an overlying layer of copper. However, because of the mechanical nature of the chromium and copper linkage, variations will occur in its strength due to processing variables.

In this structure, an intermediate layer is provided between the chromium and the copper which will form a metallurgical bond to both, thereby decreasing the process variability and increasing the reliability of the bond.

Elements that will bond metallurgically to form intermetallics and/or solid solutions with both copper and chromium are manganese, nickel, platinum, antimony, aluminum, V and Nb. Aluminum, manganese and antimony appear to be the most desirable due to a high-vapor pressure. In operation, the intermediate metal selected is deposited in any suitable manner as by evaporation techniques or sputtering.

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