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L Shaped Josephson Tunnel Device

IP.com Disclosure Number: IPCOM000082046D
Original Publication Date: 1974-Sep-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Anacker, W: AUTHOR [+2]

Abstract

Where it is difficult to grow thick native oxides on superconducting electrodes for Josephson devices to insulate the base electrode from an overlying control line which passes over an entire Josephson tunnel device, an L-shaped Josephson device may be utilized.

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L Shaped Josephson Tunnel Device

Where it is difficult to grow thick native oxides on superconducting electrodes for Josephson devices to insulate the base electrode from an overlying control line which passes over an entire Josephson tunnel device, an L-shaped Josephson device may be utilized.

Fig. 1 shows an L-shaped Josephson tunnel device which solves this problem. The base electrode M2 is L-shaped so that the horizontal leg of the L is used for the tunnel junction area. Located over base electrode M2 is the oxide tunnel barrier (Fig. 2). The counter electrode M3 is deposited over the tunnel barrier, and a control line M4 overlaps the entire Josephson structure. Control line M4 is in the direction of counter electrode M3.

Because electrode M2 is L-shaped, thick insulation does not have to be provided between it and control line M4. Since counter electrode M3 does not contain In, it is easy to provide a thick native oxide on M3. Thus, the tunnel device comprising M2, tunnel barrier M4 and M3 is totally insulated from control line M4.

The gain curve for this configuration is the same as for the true "in-line" gate. Since the length of the tunnel gate is defined only by M2, it is independent of registration between M2 and M3, thereby providing ease of fabrication.

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