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Metal Deposition with Polyimide Lift-Off Technique

IP.com Disclosure Number: IPCOM000082101D
Original Publication Date: 1974-Oct-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Winter, RE: AUTHOR

Abstract

The drawing illustrates a series of semiconductor processing steps wherein a metal pattern is deposited on a substrate using polyimide insulation and a positive resist lift-off.

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Metal Deposition with Polyimide Lift-Off Technique

The drawing illustrates a series of semiconductor processing steps wherein a metal pattern is deposited on a substrate using polyimide insulation and a positive resist lift-off.

Fig. 1 illustrates a wafer substrate prepared for metal deposition after polyimide etching using photoresist, while Fig. 2 shows the metal deposition, e.g., Cr - Cu - Au, composite upon the substrate and upon the photoresist superimposed upon polyimide and ready for lift-off, using a suitable resist developer.

Fig. 3 illustrates the structure after lift-off of the resist and metal.

Fig. 4 shows the final structure after the final polyimide insulation is deposited over the metallized substrate.

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