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Cleaning Process for Semiconductor Masks

IP.com Disclosure Number: IPCOM000082102D
Original Publication Date: 1974-Oct-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Lichauco, RJ: AUTHOR [+3]

Abstract

This eight-step cleaning process provides extremely contaminant-free semiconductor masks which have been used in a manufacturing process. Human contaminants, such as skin oils and flakes and organic residues, are removed first. Manufacturing process produced contaminants are removed second. Particulate contamination is removed last.

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Cleaning Process for Semiconductor Masks

This eight-step cleaning process provides extremely contaminant-free semiconductor masks which have been used in a manufacturing process. Human contaminants, such as skin oils and flakes and organic residues, are removed first. Manufacturing process produced contaminants are removed second. Particulate contamination is removed last.

The method includes the following steps:

1. Body residues are removed by ultrasonically agitating the used mask in a heated solution containing one part of 1-methyl-2 pyrrolidinone and one part trichloroethylene. To this is added 2.5% by volume polyethylene (15) tridecyl ether and 0.0025% of an antioxidant.

2. Rinse in trichloroethylene.

3. Photoresist residues are removed in a heated ultrasonically agitated bath containing 40% by weight o-dichlorobenzene, 40% by weight tetrachloroethylene, and 20% by weight dodecylbenzene sulfonic acid. In addition, 2.5% by volume of a 9% solution of dioctyl sodium sulfosuccinate in tetrachloroethylene is added.

4. Rinse in 80 Degrees C ultrasonic water bath.

5. Dirt and other particulate contaminates are removed by ultrasonically agitating in a heated solution containing sodium hexametaphosphate, sodium lauryl sulfate and a nonphenoxypoly (ethyleneoxy) ether.

6. Rinse in overflow ultrasonic water bath at 60 Degrees C to eliminate chemical carry over.

7. Rinse in ultrasonic deionized water bath with overflow.

8. Centrifugally dry. An alternate method is to dip...