Browse Prior Art Database

Fluorocarbon Rinse for Photoresist

IP.com Disclosure Number: IPCOM000082239D
Original Publication Date: 1974-Oct-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Clark, RJ: AUTHOR [+2]

Abstract

This RISTON* I photoresist system presents certain deficiencies where high-resolution patterns are required.

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This is the abbreviated version, containing approximately 100% of the total text.

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Fluorocarbon Rinse for Photoresist

This RISTON* I photoresist system presents certain deficiencies where high- resolution patterns are required.

It was found that the use of trichlorotrifluoroethane in place of water rinse steps produces two unique improvements.

The advantages are a instantaneous photostop action and a visual/ chemical inspection technique for photoresist residual deposits and/or marginal photoresist adhesion, both which are reoccurring photoresist process problems during the manufacture of high-density printed-circuit patterns.

The solubility of 1, 1, 1 trichloroethane (the developing agent of the RISTON I photoresist system) is far greater (almost infinite) in trichlorotrifluoroethane, thus a instantaneous photostop action is achieved through this substitution. Also the sudden termination of the development process reduces the formation of photoresist residual deposits in developed circuit areas.

The high rate of evaporation of the trichlorotrifluoroethane produces a second advantage in terms of a visual/chemical inspection technique, for photoresist residual deposits and/or marginal photoresist adhesion. Almost immediately upon removal from the trichlorotrifluoroethane rinse, a bluish white coloration develops in any area where an otherwise invisible deposit of photoresist residual exists, or in a region of marginal adhesion of photoresist. * Trademark of E. I. du Pont de Nemours & Co.

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