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Product Contamination Monitoring Technique

IP.com Disclosure Number: IPCOM000082278D
Original Publication Date: 1974-Nov-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Morrissey, JM: AUTHOR

Abstract

This product contamination monitoring technique allows measurement of charge levels in the thin oxide of a metal-oxide semiconductor (MOS), on product wafers at various points in the process. The technique can then be used to measure the charge buildup in the process, by removing wafers from a batch and using them as monitors.

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Product Contamination Monitoring Technique

This product contamination monitoring technique allows measurement of charge levels in the thin oxide of a metal-oxide semiconductor (MOS), on product wafers at various points in the process. The technique can then be used to measure the charge buildup in the process, by removing wafers from a batch and using them as monitors.

Typically, in processing semiconductor devices, monitor wafers are inserted in the process to measure oxide charge levels. The charge level is also measured on the product wafers at the first point in the process that metal is deposited. Since product wafers see different processes than monitor wafers, the charge levels are often very different. By using the product wafer as a monitor exact correlations with product are possible.

A thin oxide area 1 is processed in the kerf for MOS contamination measurements at the first metal step. A metal mask 2 is designed so that metal 3 may be deposited through it, covering the thin oxide 1 and extending up on the thin-thick oxide step 4. The area of the capacitor is essentially defined by the thin-oxide window and slightly by the metal extending on the thick oxide 5.

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