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Dynamically Pulsed Gate Lines to Overcome Gate Shorts in Nonvolatile Technology

IP.com Disclosure Number: IPCOM000082422D
Original Publication Date: 1974-Dec-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Leung, H: AUTHOR

Abstract

In nonvolatile semiconductor device technology a gate short in a cell creates a problem of writing and erasing, because the adjacent cells, as shown in the figure, shows a common substrate which must be held at -V volts during the write operation.

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Dynamically Pulsed Gate Lines to Overcome Gate Shorts in Nonvolatile Technology

In nonvolatile semiconductor device technology a gate short in a cell creates a problem of writing and erasing, because the adjacent cells, as shown in the figure, shows a common substrate which must be held at -V volts during the write operation.

Assuming a gate-to-substrate short on device 10, gang writes of all the devices shown in the array cannot be performed, because the gate-to-substrate short in device 10 results in a current flow across the substrate and creates a voltage drop, so that the other cells of the array 11, 12, and 13 do not receive sufficient voltage.

To avoid this problem the present scheme was devised and constitutes a dynamic pulse scheme, so that a gate short in any particular device will not effect other cells sharing the substrate. To successfully write the devices in the array sharing the common substrate, gate control line devices 14 and 15 are pulsed by source 18, and gate lines 16 and 17 have applied thereto a +V voltage from sources 20 and 21. Thus the capacitances in lines 16 and 17 are charged to + volts.

The gate line 16 coupled to device 10 which has the gate-to-substrate short will discharge toward the substrate voltage -V, as soon as the pulse from source 18 terminates shutting off devices 14 and 15. The discharge rate of the gate line 16 across the device 10, is the time constant of the capacitance on the gate line 16 and the resistance R1 of the...