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Grounding Scheme

IP.com Disclosure Number: IPCOM000082455D
Original Publication Date: 1974-Dec-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Viswanathan, NS: AUTHOR

Abstract

Grounding of semiconductor materials during treatment by high-energy electrons to avoid distortion caused by the build-up of charges on the semiconductor surface, is accomplished by grounding through the semiconductor.

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Grounding Scheme

Grounding of semiconductor materials during treatment by high-energy electrons to avoid distortion caused by the build-up of charges on the semiconductor surface, is accomplished by grounding through the semiconductor.

The back side of a semiconductor material such as a silicon wafer, whose front surface is coated with a layer of resist which is to be patterned by bombardment with electrons, is etched to bare silicon using HF (to remove oxide) and an organic solvent which removes any photoresist. The etching forms an annulus of bare silicon that is placed in contact with a metal holder which is connected to ground. Contact resistances in the order of less than 10K ohms are obtained.

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