Browse Prior Art Database

High Breakdown Voltage Device

IP.com Disclosure Number: IPCOM000082588D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Atwood, BC: AUTHOR [+3]

Abstract

This compact device provides a planar bipolar structure useful in power transistors which require high-collector/base breakdown voltage, while utilizing very little surface area.

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High Breakdown Voltage Device

This compact device provides a planar bipolar structure useful in power transistors which require high-collector/base breakdown voltage, while utilizing very little surface area.

The high-breakdown voltage device includes a P-type base region 10 diffused into N-type semiconductor substrate 12, which is surrounded by one or more annular P-type diffused rings 14 and 16. Spacing between rings 14 and 16 will establish one or more punch-through voltage drops, when a potential is applied between base contact 18 and collector contact 20.

On outermost ring 16 there is provided a field plate electrode 22, which extends over the surface of substrate 12 between ring 16 and N-type channel stop 24. The presence of field plate 22 prevents avalanche breakdown near the surface where it will be of relatively low magnitude, and forces avalanche breakdown to take place within the semiconductor bulk, as indicated.

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