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Automated RF Sputtering Apparatus

IP.com Disclosure Number: IPCOM000082635D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 82K

Publishing Venue

IBM

Related People

Budo, Y: AUTHOR [+3]

Abstract

This sputtering apparatus is adapted to continuously sputter deposit dielectric material on the surface of substrates without breaking the vacuum.

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Automated RF Sputtering Apparatus

This sputtering apparatus is adapted to continuously sputter deposit dielectric material on the surface of substrates without breaking the vacuum.

The sputtering apparatus includes a coaxial rotating anode 10 provided preferably with twelve flat sides on the periphery that are slightly inclined toward the axis, and provided with suitable structure 12 to support the wafer in a position slightly gapped from the flat surface 14. The rotatable shaft 15 is hollow which provides a passage for circulating coolant through passages 16 in the anode. The anode 10 is rotated in an indexing movement by the Geneva mechanism 18 driven by motor 20.

A cylindrical cathode electrode 22 is disposed about the anode 10 and has supported on its inner surface, a cathode 24 of the material to be deposited. The sputtering chamber 26 between anode 10 and cathode 24 is evacuated by a suitable pump through outlet 28.

RF power is applied across the cathode and anode by a noncontact power coupling capacitor 30 disposed about the axis of the anode, and consists of cylindrical elements depending from the stationary support 32 and the anode 10. This arrangement solves the problems of reliable low-loss transfer to the electrode, and eliminates the need for a transmission line between the series capacitor and the matching networks and the electrode, and eliminates the need for high-power vacuum feedthrough. The capacitor can also be made variable if desired. RF coi...