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Browse Prior Art Database

Substrate Holder for Liquid Phase Epitaxy Growths

IP.com Disclosure Number: IPCOM000082644D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Mendel, E: AUTHOR [+4]

Abstract

This magnetic garnet liquid phase epitaxy (LPE) process consists of isothermal dipping of a seed crystal (substrate) in a fluxed melt, where the nutrients are supersaturated. Growing successive films (epitaxial layers) depends in part upon the melt condition, which is a function of the melt and substrate temperature and temperature uniformity, the amount of garnet that is removed from the melt, and the quantity of flux removed when the substrate is removed.

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Substrate Holder for Liquid Phase Epitaxy Growths

This magnetic garnet liquid phase epitaxy (LPE) process consists of isothermal dipping of a seed crystal (substrate) in a fluxed melt, where the nutrients are supersaturated. Growing successive films (epitaxial layers) depends in part upon the melt condition, which is a function of the melt and substrate temperature and temperature uniformity, the amount of garnet that is removed from the melt, and the quantity of flux removed when the substrate is removed.

The three-fingered holder shown results in less melt entrapment, lower thermal mass, successive epitaxial layers that have improved surface quality, and minimizing the post epitaxial flux removal time. In addition, this holder is easy to use and reusable, securely holds the substrate without damaging the substrate, does not contaminate the melt or substrate, has low-thermal capacity, and maintains its structural integrity at the growth temperature.

Fig. 1 shows the holder, which is a sleeve of pure platinum tubing 4 whose inside dimension permits it to slip over a dip rod.

Fused to the sleeve 4 at the capped end 6 are three platinum wire fingers 8, which are dimensioned for mechanical integrity at the growth temperature. These wire fingers are equally spaced for mechanical symmetry around the sleeve's axis and extend at least 0.75 inch beyond the capped end 6. The wire fingers 8 are bent to accommodate current size substrates.

The wire fingers 8 are formed (fla...