Browse Prior Art Database

Continuous Growth of Semiconductor Crystal Ribbons without a Crucible

IP.com Disclosure Number: IPCOM000082645D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Ciszek, TF: AUTHOR

Abstract

This is a method of producing continuous semiconductor crystal ribbons without using a crucible. The molten silicon is held by surface tension (as in flat zoning) at the top of a polycrystalline silicon rod. Heating the silicon and graphite or SiC die and pulling the seed crystal upwards causes solidification, and the depleted melt reservoir is replenished as the silicon rod rises through the capillary die. The width of the crystal ribbon is only limited by the capillary die width.

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Continuous Growth of Semiconductor Crystal Ribbons without a Crucible

This is a method of producing continuous semiconductor crystal ribbons without using a crucible. The molten silicon is held by surface tension (as in flat zoning) at the top of a polycrystalline silicon rod. Heating the silicon and graphite or SiC die and pulling the seed crystal upwards causes solidification, and the depleted melt reservoir is replenished as the silicon rod rises through the capillary die. The width of the crystal ribbon is only limited by the capillary die width.

Not using a crucible during crystal growth eliminates the crucible from contaminating the crystal since the crucible is a source of oxygen, which contaminates the crystal with up to 10/18/ atoms/cc oxygen as the quartz dissolves.

The figure shows the crystal ribbon 4 pulling polycrystalline silicon rod 18 up through capillary die 6 at rate VR. The capillary die is held in place by capillary die holder 8 and capillary die support 10.

The melt 12 is heated by RF coil 14 and an auxilliary RF coil 16 (which is optional) at approximately 4MHZ. Polycrystalline silicon rod 18 moves upwards at rate VR, which is defined as: VF = 4VR WT over pi D/2/. where: VR = The ribbon pulling speed. W = The ribbon width. T = The ribbon thickness. D = The silicon rod diameter.

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