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Semiconductor Cleaning Process

IP.com Disclosure Number: IPCOM000082651D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Mayeux, A: AUTHOR

Abstract

In the manufacturing process of semiconductor wafers, a final rinse by deionized water is generally carried out prior to metallization. A detailed analysis revealed that deionized water contaminated the oxide surface, resulting in a leakage current of up to several hundreds of millivolts.

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Semiconductor Cleaning Process

In the manufacturing process of semiconductor wafers, a final rinse by deionized water is generally carried out prior to metallization. A detailed analysis revealed that deionized water contaminated the oxide surface, resulting in a leakage current of up to several hundreds of millivolts.

The method consists in bubbling the water being used in the rinse step with carbonic gas. The use of bubbled water reduces the leakage current in the oxide and, therefore, prevents the positive ions from contaminating the oxide surface, on the condition that the active sites be less acid than the bubbled water.

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