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Elimination of In Plane Magnetization Layers in Amorphous GdCoMo Films

IP.com Disclosure Number: IPCOM000082706D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Coburn, JW: AUTHOR [+3]

Abstract

The surface layers in magnetic materials for bubble domain memory devices have a significant influence on the dynamics of the bubble domains they support.

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Elimination of In Plane Magnetization Layers in Amorphous GdCoMo Films

The surface layers in magnetic materials for bubble domain memory devices have a significant influence on the dynamics of the bubble domains they support.

Amorphous films capable of supporting bubble domains of GdCoMo that are formed by a bias sputtering process, have an outer surface region or layer having an in-plane magnetization. The remaining portion of the GdCoMo film has the uniaxial anisotropy oriented normal to the plane of the film. The in-plane magnetization layer is undesirable. The thickness of this in-plane layer on the outer surface is of the order of 100 angstroms and may be removed by sputter etching.

It has been observed that removing 30-40 angstroms from the surface by sputter etching eliminates the deleterious effect of the in-plane magnetization region. It is no longer necessary to completely remove the entire in-plane magnetization layer, that is, 100 angstroms, since the deleterious effects are eliminated by removal of 30-40 angstroms.

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