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Browse Prior Art Database

Zinc Diffusion Source

IP.com Disclosure Number: IPCOM000082716D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

DeGelormo, JF: AUTHOR [+2]

Abstract

A method is provided for reproducibly obtaining high zinc surface concentration in GaAs without damage to the GaAs surface, so that improved double-heterojunction (DH) lasers can be fabricated.

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This is the abbreviated version, containing approximately 100% of the total text.

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Zinc Diffusion Source

A method is provided for reproducibly obtaining high zinc surface concentration in GaAs without damage to the GaAs surface, so that improved double-heterojunction (DH) lasers can be fabricated.

In order to attain CW operation in DH lasers, high-surface concentrations (~10/20/ cm/-3/) of zinc are needed. One approach is to diffuse zinc into a GaAs surface, using ZnAs(2) as a source at a temperature between 600-750 degrees
C. Another approach is to use Zn As as a source, at the same range of temperatures. When Zn As is used as a source at these temperatures, a liquidus phase forms which deteriorates the GaAs surface. However, when ZnAs is used as a source of zinc diffusion, it is difficult to control the needed arsenic pressure during diffusion to obtain reproducible results.

In order to avoid such, the above-noted surface erosion and poor reproducibility, ZnAs and Zn As are used simultaneously as sources for zinc diffusion at a temperature below 770 degrees C. Such combination of conditions improves the diffused GaAs surface, because the ZnAs -Zn As -GaAs region in the phase diagram contains no liquid, and the As and Zn pressures are invariant at a given temperature independent of the components used in the system.

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