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In Line Faraday Cup for Ion Implantation

IP.com Disclosure Number: IPCOM000082721D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Keller, J: AUTHOR [+3]

Abstract

A system has been constructed that is capable of measuring and controlling a beam of ions, such as that produced by a Van de Graaf or other ion accelerator.

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In Line Faraday Cup for Ion Implantation

A system has been constructed that is capable of measuring and controlling a beam of ions, such as that produced by a Van de Graaf or other ion accelerator.

As seen in the figure, the ion bean 2 enters the system from the left through a grounded electrode 4, which removes any debris particles not in the central beam. A set of deflection electrodes 6, biased at +100V and -100V, respectively, deflect out any free electrons in the beam. The ion beam next passes through a grounded electrode 8 which provides the tightest collimation, through electron suppressor electrode 10 and enters the Faraday cup 12 through aperture 14.

Within the Faraday cup is placed a rotating bean chopper 20, which is coated with a substance such as tungsten to suppress sputtered ions. The rotating chopper 20 intercepts a small fraction of the ion beam, to produce a current that is measured by ammeter 22. The monitoring of the small fraction of the beam current induced in the rotating chopper permits the control and measurement of the ion beam current.

The ion beam emerges from the Faraday cup 12 and electron suppresser 15, and continues to the right to be deflected by plates 18 for use in experimentation.

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