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Barrier Layer for Magnetic Bubble Domain Film Device Applications

IP.com Disclosure Number: IPCOM000082725D
Original Publication Date: 1975-Jan-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+3]

Abstract

It is necessary to have a nonconducting barrier layer of a few hundred angstroms (500 angstroms-2000 angstroms) for magnetic bubble domain GdCo film device applications. Such a layer can be achieved by using amorphous carbon as the insulating material, rather than an amorphous oxide layer.

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Barrier Layer for Magnetic Bubble Domain Film Device Applications

It is necessary to have a nonconducting barrier layer of a few hundred angstroms (500 angstroms-2000 angstroms) for magnetic bubble domain GdCo film device applications. Such a layer can be achieved by using amorphous carbon as the insulating material, rather than an amorphous oxide layer.

Two methods for obtaining such amorphous thin carbon films are: (1) Vacuum evaporation from a carbon arc, and (2) RF sputtering from a carbon cathode.

Amorphous carbon films with tetrahedral bonding have been obtained by radio frequency sputtering from a vitreous carbon target under the following conditions: after presputtering for 30 min at a pressure of 15 microns of 100% argon gas, films are deposited with a forward power of 300 watts for a 5 inch target for 15 min.

The films are approximately 1100 angstroma in thickness and exhibit a hardness of 1700 on the Vicker's scale, which is equal to the hardness of sapphire. The resistivity measured on glass is 10 meg ohms, and between 1 and 2 meg ohms on GdCo films.

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