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Surface Passivation for Decomposable Substrates

IP.com Disclosure Number: IPCOM000082889D
Original Publication Date: 1975-Feb-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burn, RA: AUTHOR [+3]

Abstract

Some semiconductor materials, for example, gallium arsenide, decompose upon heating. This decomposition presents a problem when liquid phase epitaxial growth at high temperature is desired. A method has been found of protecting a substrate from such decomposition prior to epitaxial growth.

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Surface Passivation for Decomposable Substrates

Some semiconductor materials, for example, gallium arsenide, decompose upon heating. This decomposition presents a problem when liquid phase epitaxial growth at high temperature is desired. A method has been found of protecting a substrate from such decomposition prior to epitaxial growth.

The gallium arsenide surface is subjected to anodization. Even though the anodized surface layer appears to be impervious in many respects, when it is brought in contact with a gallium arsenide liquid phase epitaxy melt, the melt dissolves away the anodized film and thus exposes a fresh surface for epitaxial growth.

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