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Logic Circuit With Dual Metal Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000082941D
Original Publication Date: 1975-Mar-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Gani, VL: AUTHOR [+3]

Abstract

The logic circuit shown in Fig. 1 utilizes two types of Schottky barrier diodes (SBD's). The diodes D1, with low-forward voltage, comprise an AND gate and the diode D2, with high-forward voltage functions as a saturation clamp for transistor T1. As partially depicted in Fig. 2, a single process may be employed to fabricate both types of SBD's in a structure fabricated by large-scale integration techniques.

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Logic Circuit With Dual Metal Schottky Barrier Diodes

The logic circuit shown in Fig. 1 utilizes two types of Schottky barrier diodes (SBD's). The diodes D1, with low-forward voltage, comprise an AND gate and the diode D2, with high-forward voltage functions as a saturation clamp for transistor T1. As partially depicted in Fig. 2, a single process may be employed to fabricate both types of SBD's in a structure fabricated by large-scale integration techniques.

The processing may be achieved by masking out the D1's while depositing PtSi for the D2, then depositing Ti or Cr for the D1's and D2. Subsequently, Al-Cu is deposited over the Ti or Cr. The Ti or Cr is used as a diffusion barrier to prevent interaction between PtSi and Al-Cu metallurgy for the high-forward SBD D2. The Ti or Cr directly applied over the N-epi region will form the low-forward SBD's, D1.

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