Browse Prior Art Database

Fabrication of Complimentary FETs With Ion Implanted Source Drains

IP.com Disclosure Number: IPCOM000082951D
Original Publication Date: 1975-Mar-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 70K

Publishing Venue

IBM

Related People

Barile, CA: AUTHOR [+3]

Abstract

Referring to Fig. 1, the boron implanted P-pocket areas in the wafer are in place and have already been defined by a step of suitable height. At this point in the fabrication process, 100 to 500 angstroms of thermal SiO(2) is grown on the wafer. This is followed by a pyrolytic deposition of from 200 to 400 angstroms of silicon nitride, and then by 2,500 to 3,000 angstroms of pyrolytic SiO(2). Using conventional photo resist techniques, the gate pattern is subtractively etched in the pyrolytic SiO(2)

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Fabrication of Complimentary FETs With Ion Implanted Source Drains

Referring to Fig. 1, the boron implanted P-pocket areas in the wafer are in place and have already been defined by a step of suitable height. At this point in the fabrication process, 100 to 500 angstroms of thermal SiO(2) is grown on the wafer. This is followed by a pyrolytic deposition of from 200 to 400 angstroms of silicon nitride, and then by 2,500 to 3,000 angstroms of pyrolytic SiO(2). Using conventional photo resist techniques, the gate pattern is subtractively etched in the pyrolytic SiO(2)

The resist is stripped and the silicon nitride is etched using the pyrolytic oxide as a mask. The underlying thermal oxide may or may not be etched in consideration of the adhesive quality of future photo resist coatings. At this point in the process, a portion of the wafer structure is depicted in Fig. 1.

Referring to Fig. 2, a first coat of resist is applied to the wafer by conventional techniques. The first resist coat is AZ-1305H* type, or equivalent, containing a thermal free radical initiator, such as benzoyl peroxide in a concentration range of 13 to 100 grams per liter of resist solution. The device pattern is exposed, developed and post-baked at 210 degrees C for 20 minutes. (It should be noted that the post-bake can be of a lower temperature if carried on for longer periods of time). Next, a second coat of AZ-1305H containing benzoyl peroxide (or equivalent) in a concentration of 13 grams per liter or less is applied to the wafer, covering the P-channel diffusion regions. This resist coat is post-baked at a temperature of at least 135 degrees C for 30 minutes. At this point in the process, a portion of the wafer structure...