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Material for Thin Film Resistors

IP.com Disclosure Number: IPCOM000083067D
Original Publication Date: 1975-Mar-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gangulee, A: AUTHOR [+2]

Abstract

Mo-doped amorphous Co-Gd films (containing typically 70 at.% Co 15 at.% Gd and 15 at.% Mo) is used as an amorphous metal electrical resistor material.

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Material for Thin Film Resistors

Mo-doped amorphous Co-Gd films (containing typically 70 at.% Co 15 at.% Gd and 15 at.% Mo) is used as an amorphous metal electrical resistor material.

These films have a reproducible typical resistivity of 180 microhm-cm and contrary to most materials, they have a small negative temperature coefficient of resistivity (TCR) of about -150 x 10/-6// degrees C. This negative TCR makes this material particularly suitable for use in resistance-capacitance circuits employing tantalum oxide capacitors; since tantalum oxide capacitors have a positive temperature coefficient of about +150 x 10/-6// degrees C, the temperature coefficient of the characteristic frequency or time constant is essentially zero.

The thermal stability of the resistivity of these amorphous Co-Gd-Mo films is also satisfactory. There was no detectable change in the room temperature resistivity after aging treatments of 6 hours at 250 degrees C, or 3 hours at 350 degrees C, or 1 hour at 500 degrees C.

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