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Chemical Vapor Deposition Process

IP.com Disclosure Number: IPCOM000083070D
Original Publication Date: 1975-Mar-01
Included in the Prior Art Database: 2005-Feb-28
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

Present methods of producing III-V semiconductor compounds such as GaAs, InAs, GaP, InP, etc., require the use of vapor of AsCl(3) or pCl(3). This vapor is generated in a reaction flask and is passed over hot Ga or In to provide a vapor of GaCl or InCl. The GaCl or InCl reacts with vapors of As or P to produce the desired GaAs, InAs, GaP, Inp, etc.

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Chemical Vapor Deposition Process

Present methods of producing III-V semiconductor compounds such as GaAs, InAs, GaP, InP, etc., require the use of vapor of AsCl(3) or pCl(3). This vapor is generated in a reaction flask and is passed over hot Ga or In to provide a vapor of GaCl or InCl. The GaCl or InCl reacts with vapors of As or P to produce the desired GaAs, InAs, GaP, Inp, etc.

This method has the disadvantage of requiring an "incubation period", i.e., Ga or In must be completely saturated with As or P before the desired product can be produced. During this incubation period, which can be a matter of hours, the GaCl or InCl is being generated and wasted.

A method in which a separate flow of AsCl , for example, from a separate AsCl(2) source downstream from the Ga or In source would eliminate the incubation period and, therefore, provide a more efficient method.

Referring to the figure, a AsCl(3) or PCl(3) from generating source 1 is allowed to flow into reaction tube 2 together with a carrier gas, e.g., H(2), through source 3. The AsCl(3) or PCl(3) passes over Ga or In source 4 situated in furnace 5, where it reacts with Ga or In. The product is deposited at a deposition substrate 6.

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