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Browse Prior Art Database

Fine Line Pattern Definition with Sputter Etch Mask

IP.com Disclosure Number: IPCOM000083188D
Original Publication Date: 1975-Apr-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Grosewald, PS: AUTHOR [+2]

Abstract

A technique is described for using europium oxide films as sputter-etch masks as high temperature lift-off matrix material. Europium oxide has been found to be suitable for the above purpose in that it has a low DC and RF sputtering rate, a high-etch rate, and is temperature stable.

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Fine Line Pattern Definition with Sputter Etch Mask

A technique is described for using europium oxide films as sputter-etch masks as high temperature lift-off matrix material. Europium oxide has been found to be suitable for the above purpose in that it has a low DC and RF sputtering rate, a high-etch rate, and is temperature stable.

In one mode, europium oxide is used as material B in the figure, being etched away after deposition of materials C to leave the desired pattern material C1. In such application, europium oxide overcomes problems of low-temperature utility during deposition of material C, chemical reaction with material C, and solubility of material A or C in material B.

In another mode, europium oxide can be used as material A in the figure, where B is resist or copper, for example. At thicknesses of less than 1,000 angstroms, the material is semitransparent and process compatible with projection printing methods.

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