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Photoelectron Beam Resist

IP.com Disclosure Number: IPCOM000083198D
Original Publication Date: 1975-Apr-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fredericks, EC: AUTHOR [+3]

Abstract

A positive resist formulation, sensitive to photons in the wavelength region of photoresist exposures (3500-4700 Angstroms), and having enhanced sensitivity to electron exposure doses of less than 10x10/-6/ coulombs/cm/2/ includes a noncross-linkable resin.

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Photoelectron Beam Resist

A positive resist formulation, sensitive to photons in the wavelength region of photoresist exposures (3500-4700 Angstroms), and having enhanced sensitivity to electron exposure doses of less than 10x10/-6/ coulombs/cm/2/ includes a noncross-linkable resin.

The formulation includes from 10-30 percent, by weight, of a napthaquinone diazide light sensitizer; a noncross-linkable resin such as polymethyl methacrylate-methacrylic acid copolymers, -butyl methacrylate-methacrylic acid copolymers, and cyclohexyl methacrylate-methacrylic acid copolymers; from 0.1- 1.0 percent by weight of an electron activator such as benzonitrile; and about 1.0 percent by weight of an internal plasticizer such as octyl phthalate.

The above materials are dissolved in a solvent, such as CELLOSOLVE* acetate, applied to the substrate, and prebaked at about 100 degrees C. The dry resist layer is then exposed to either light or high-energy radiation in a patternwise manner and developed in an alkaline developer, to remove the exposed portions of the resist layer. The resist can be stripped with CELLOSOLVE. *Trademark of Union Carbide Corporation.

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