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IGFET Address Powered Schmidt Storage Cell

IP.com Disclosure Number: IPCOM000083226D
Original Publication Date: 1975-Apr-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Sonoda, GY: AUTHOR

Abstract

An insulated gate field-effect transistor (IGFET) storage cell can be supplied with sufficient power to sustain the state of the cell, and then be supplied with power through the bit lines when reading or writing to permit nondestructive reading of the information so stored.

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IGFET Address Powered Schmidt Storage Cell

An insulated gate field-effect transistor (IGFET) storage cell can be supplied with sufficient power to sustain the state of the cell, and then be supplied with power through the bit lines when reading or writing to permit nondestructive reading of the information so stored.

Devices Q(1) and Q(2) are cross-coupled FETS which store a bit of information. The bit of information stored depends on whether Q(1) or Q(2) is conducting. While the circuit is not being addressed for reading or writing information, Q(1) and Q(2) are powered by source V(1) through load devices Q(3) and Q(4). This power is sufficient to maintain the state of the device stored in the bistable circuit. That is the current in the conducting device Q(1) or Q(2) of the bistable circuit is sufficient to guarantee that the nonconducting device remains off.

However, the amount of power supplied to the bistable circuit is not sufficient to permit nondestructive reading of the information stored in the cell. Therefore, additional power is supplied to the bistable circuit from the bit lines B(1) and B(0) when the voltage on the X selection wire is energized, to render devices Q(5) and Q(6) conductive. With increased power supplied through devices Q(5) and Q(6), reading and writing functions may be performed by addressing the word and bit lines.

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